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Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

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S. Decoster, B. Johannessen, C.J. Glover, S. Cottenier, T. Bierschenk, H. Salama, F. Kremer, K. Temst, A. Vantomme, M.C. Ridgway
Applied Physics Letters
101 (26), 261904
2012
A1

Abstract 

We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250 degrees C). Using extended x-ray absorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations http://dx.doi.org/10.1063/1.4773185]

Open Access version available at UGent repository

DOI 

http://dx.doi.org/10.1063/1.4773185

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PDF icon 12_ApplPhysLett_101_261904_Decoster.pdf

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